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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 18* i d @ v gs = 12v, t c = 100c continuous drain current 14 i dm pulsed drain current 72 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 87 mj i ar avalanche current 18 a e ar repetitive avalanche energy 7.5 mj dv/dt peak diode recovery dv/dt 1.4 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in./1.6mm from case for 10sec) weight 4.3 (t ypical) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space applications.these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardened jansr2n7484t3 power mosfet 100v, n-channel thru-hole (to-257aa) ref: mil-prf-19500/702 www.irf.com 1
technology features: single event effect (see) hardened ultra low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic eyelets light weight

to-257aa product summary part number radiation level r ds(on) i d qpl part number irhy57130cm 100k rads (si) 0.07 ? 18a* jansr2n7484t3 IRHY53130CM 300k rads (si) 0.07 ? 18a* jansf2n7484t3 irhy54130cm 500k rads (si) 0.07 ? 18a* jansg2n7484t3 irhy58130cm1000k rads (si) 0.085 ? 18a* jansh2n7484t3 irhy57130cm pd - 93826d
irhy57130cm, jansr2n7484t3 pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 100 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.11 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.07 ? v gs = 12v, i d = 14a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 13 ? ? s ( )v ds > 15v, i ds = 14a i dss zero gate voltage drain current ? ? 10 v ds = 80v ,v gs =0v ??25 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 50 v gs =12v, i d = 18a q gs gate-to-source charge ? ? 7.4 nc v ds = 50v q gd gate-to-drain (?miller?) charge ? ? 20 t d (on) turn-on delay time ? ? 25 v dd = 50v, i d = 18a, t r rise time ? ? 100 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 35 t f fall time ? ? 30 l s + l d total inductance ? 6.8 ? c iss input capacitance ? 1005 ? v gs = 0v, v ds = 25v c oss output capacitance ? 365 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 50 ? na ? nh ns a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 1.67 r thja junction-to-ambient ? ? 80 c/w measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) note: corresponding spice and saber models are available on international rectifier web site.

source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 18* i sm pulse source current (body diode) ?? 72 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 18a, v gs = 0v t rr reverse recovery time ? ? 250 ns t j = 25c, i f = 18a, di/dt 100a/ s q rr reverse recovery charge ? ? 850 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a
table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 500k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 100 ? 100 ? v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 10 ? 25 a v ds = 80v, v gs =0v r ds(on) static drain-to-source ? 0.074 ? 0.09 v gs = 12v, i d =14a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.07 ? 0.085 v gs = 12v, i d =14a on-state resistance (to-257aa) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part numbers irhy57130cm (jansr2n7484t3), IRHY53130CM (jansf2n7484t3) and irhy54130cm (jansg2n7484t3) 2. part number irhy58130cm (jansh2n7484t3) fig a. single event effect, safe operating area v sd diode forward voltage ? 1.2 ? 1.2 v gs = 0v, i s = 18a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. table 2. single event effect safe operating area

0 20 40 60 80 100 120 0 -5 -8 -10 -15 -20 vgs vds br i au ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v br 36.7 309 39.5 100 100 100 100 100 i 59.4 341 32.5 100 100 100 35 25 au 82.3 350 28.4 100 100 80 25 www.irf.com 3 irhy57130cm, jansr2n7484t3 na ? ? v v
irhy57130cm, jansr2n7484t3 pre-irradiation 4 www.irf.com

15 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 10 100 5.0 6.0 7.0 8.0 9.0 10.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 150 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 22a 16a 18a
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1 10 100 0 400 800 1200 1600 2000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0 10 20 30 40 50 0 5 10 15 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 22a v = 20v ds v = 50v ds v = 80v ds 16a 18a 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100s
irhy57130cm, jansr2n7484t3 pre-irradiation 6 www.irf.com $

v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f $
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0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v gs 25 50 75 100 125 150 0 5 10 15 20 25 t , case temperature ( c) i , drain current (a) c d limited by package
www.irf.com 7 pre-irradiation irhy57130cm, jansr2n7484t3 q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, !

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t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 30 60 90 120 150 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 7.2a 10a 16a 18a v gs
irhy57130cm, jansr2n7484t3 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 0.53mh peak i l = 18a, v gs = 12v i sd 18a, di/dt 155a/ s, v dd 100v, t j 150c footnotes:

case outline and dimensions ? to-257aa ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/2006 p in assignment s 1 = drain 2 = source 3 = gate

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